10
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 54.05 dBm (254 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1350 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
56
54
52
37 3938
40 4341
42
Actual
Ideal
P1dB = 53.1 dBm
(200 W)
57
55
49
P
out
, OUTPUT POWER (dBm)
P6dB = 54.68 dBm (294 W)
NOTE:
Load Pull Test Fixture Tuned for Peak Output Power @ 28 V
53
58
59
60
61
35
34
33
32
51
50
31
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
4.66 - j8.05
0.53 - j2.26
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V
36
P3dB = 54.94 dBm (311 W)
Pin, INPUT POWER (dBm)
VDD
= 32 Vdc, I
DQ
= 1350 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
56
54
52
37 3938
40 4341
42
Actual
Ideal
P1dB = 54.1 dBm
(257 W)
57
55
P
out
, OUTPUT POWER (dBm)
P6dB = 55.47 dBm (352 W)
NOTE:
Load Pull Test Fixture Tuned for Peak Output Power @ 32 V
53
58
59
60
62
35
34
33
32
51
50
61
44
Test Impedances per Compression Level
Zsource
Ω
Zload
Ω
P3dB
4.66 - j8.05
0.64 - j2.17
Figure 18. Pulsed CW Output Power
versus Input Power @ 32 V
相关PDF资料
MRF7S21170HR5 IC MOSFET RF N-CHAN NI-880
MRF7S21210HSR5 MOSFET RF N-CH 63W NI-780S
MRF7S27130HSR5 MOSFET RF N-CH 23W NI-780S
MRF7S35015HSR5 MOSFET RF N-CH 15W NI-400S-240
MRF7S35120HSR5 MOSFET RF N-CH 120W NI-780S
MRF7S38010HSR5 MOSFET RF N-CH 2W 30V NI-400S
MRF7S38040HSR5 MOSFET RF N-CH 8W 30V NI-400S
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